Silicon drift detector for X-ray nanoanalysis
Bruker Nanocontact supplier
XFlash 5060 T
Bruker's XFlash 5060 T silicon drift detector is suitable for tasks in X-ray micro- and nanoanalysis on transmission electron microscopes.
Providing 60 mm active area, it guarantees optimum solid angle for the analysis at low beam currents and of samples with low X-ray yield.
A slender detector end cap and microscope-specific collimator design allow shortest detector-sample distances and provide a high take-off angle without requiring sample tilt.
The analyst can collect spectra with excellent peak-to-background ratio and without the disadvantage of losing the zone axis.
The company claims that the XFlash 5060 T has superior speed and lower dead times, providing advantages in collection efficiency, even in low-count rate situations.
Additionally, the XFlash 5060 T is said to operate with good energy resolution.
The detector is fully operational at input count rates of up to 750,000 cps, an advantage for low-mag high count rate STEM mapping.
The sensitivity of the XFlash 5060 T allows detection of high energy radiation.
In combination with signal processing electronics and software, reliable quantitative analysis of element peaks at 40 kV and above is possible.
A version with 127 eV at Mn Ka is available, providing 54 eV carbon Ka and 64 eV fluorine Ka resolution.
This enables light element analysis of elements down to boron.
The XFlash 5060 T, including electronics, is designed to cause minimum interference with all compatible transmission electron microscopes, conventional or aberration-corrected.
The detector is lightweight with fanless cooling, causing minimal strain on the column and introduces no vibrations.
The low temperature gradient provides stable measurement conditions and the completely non-magnetic detector head minimises beam shift, when moving the detector in or out during TEM operation.
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